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Q1NE10L View Datasheet(PDF) - STMicroelectronics

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Q1NE10L Datasheet PDF : 13 Pages
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Electrical characteristics
2
Electrical characteristics
STQ1NE10L
(TCASE = 25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DG Clamped voltage
ID = 250µA, VGS = 0
100
V
Zero gate voltage
IDSS drain current (VGS = 0)
VDS = Max rating
VDS = Max rating
TC = 125°C
1
µA
10 µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ±16 V
±100 nA
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250µA
1
2.5 V
t(s) RDS(on)
Static drain-source ON
resistance
VGS = 10 V, ID = 0.5 A
VGS = 5 V, ID = 0.5 A
0.30 0.40
0.35 0.45
uc Table 4. Dynamic
rod Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
P gfs Forward transconductance VDS = 15 V, ID = 0.5 µA
2
S
lete Ciss
o Coss
s Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
345
VDS = 25 V, f = 1MHz, VGS = 0
45
20
pF
pF
pF
Ob tr(on)
) - tf
Turn-on time
Rise time
VDD = 50 V, ID = 0.5 A,
RG = 4.7 Ω, VGS = 10 V
Figure 12
11
ns
12
ns
ns
t(s td(off)
c tf
Turn-off delay time
Fall time
rodu Qg Total gate charge
P Qgs Gate-source charge
ObsoleteQgd Gate-drain charge
VDD = 50 V, ID = 0.5 A
RG = 4.7Ω, VGS = 5 V
Figure 12
VDD = 80 V, ID = 1A,
VGS = 5V
Figure 13
20
ns
13
ns
7
nC
1.5
nC
3.5
nC
4/13
 

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