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Q1NE10L View Datasheet(PDF) - STMicroelectronics

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Q1NE10L Datasheet PDF : 13 Pages
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STQ1NE10L
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS Drain-source voltage (VGS = 0)
100
V
VGS Gate-source voltage
± 16
V
ID Drain current (continuous) at TC = 25°C
1
A
ID Drain current (continuous) at TC=100°C
0.6
A
IDG Drain gate current (continuous)
± 50
mA
IGS Gate source current (continuous)
± 50
mA
IDM(1) Drain current (pulsed)
4
A
PTOT(2) Total dissipation at TC = 25°C
Derating factor
t(s) dv/dt(3) Peak diode recovery voltage slope
c EAS(4) Single pulse avalanche energy
du Tstg Storage temperature
ro TJ Operating junction temperature
P 1. Pulse width limited by safe operating area.
te 2. Related to Rthj -l
le 3. ISD 1A, di/dt 200A/µs, VDD V(BR)DSS, TJ TJMAX
so 4. Starting TJ = 25 oC, ID = 1A, VDD = 50V
b Table 2. Thermal data
- O Symbol
Parameter
t(s) RthJC
c RthJA
Obsolete Produ Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
3
0.025
6
400
-55 to 150
W
W/°C
V/ns
mJ
°C
Value
40
125
260
Unit
°C/W
°C/W
°C
3/13
 

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