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STD20NF10T4 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
STD20NF10T4 N-channel 100V - 0.038Ω - 100A - DPAK Low gate charge STripFET™ II Power MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
STD20NF10T4 Datasheet PDF : 14 Pages
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STD20NF10
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0)
VDGR
Drain-gate voltage (RGS = 20 k)
VGS
ID (1)
Gate- source voltage
Drain current (continuous) at TC = 25°C
ID
IDM(2)
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Ptot
Total dissipation at TC = 25°C
Derating Factor
dv/dt(3) Peak diode recovery avalanche energy
EAS (4)
Single pulse avalanche energy
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. Current limited by package
2. Pulse width limited by safe operating area.
3. ISD 25A, di/dt 300A/µs, VDD =V(BR)DSS, Tj TJMAX
4. Starting Tj = 25 °C, ID = 10A, VDD = 27V
Value
100
100
± 20
25
21
100
85
0.57
20
300
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Table 3. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
TJ
Maximum lead temperature for soldering purpose
1.76
°C/W
100
°C/W
300
°C
3/13
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