STD20NF10T4(2002) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
View to exact match
STD20NF10T4
(Rev.:2002)
(Rev.:2002)
STMicroelectronics
STD20NF10T4 Datasheet PDF : 9 Pages
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STD20NF10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 50 V
ID = 15 A
15
ns
tr
Rise Time
RG = 4.7 Ω
VGS = 10 V
40
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD= 80 V ID= 30 A VGS=10 V
40
55
nC
8
nC
15
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 50 V
ID = 15 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
Min.
Typ.
45
10
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 20 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 30 A
di/dt = 100A/µs
VDD = 55 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
110
390
7.5
Max.
30
120
1.3
Unit
A
A
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/9
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