STD20NF10(2002) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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STD20NF10
(Rev.:2002)

N-CHANNEL 100V - 0.038 Ω - 25A IPAK/DPAK LOW GATE CHARGE STripFET™ II POWER MOSFET

STMicroelectronics 

STD20NF10

N-CHANNEL 100V - 0.038 Ω - 25A IPAK/DPAK

LOW GATE CHARGE STripFET™ II POWER MOSFET

TYPE

VDSS

RDS(on)

ID

STD20NF10

100 V <0.045 Ω 25 A(*)

s TYPICAL RDS(on) = 0.038 Ω

s EXCEPTIONAL dv/dt CAPABILITY

s APPLICATION ORIENTED

CHARACTERIZATION

s THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX “-1")

s SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4")

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

s HIGH-EFFICIENCY DC-DC CONVERTERS

s UPS AND MOTOR CONTROL

3

2

1

IPAK

TO-251

(Suffix “-1”)

3

1

DPAK

TO-252

(Suffix “T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID(*)

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM(•) Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (1) Peak Diode Recovery voltage slope

EAS (2) Single Pulse Avalanche Energy

Tstg

Storage Temperature

Tj

Operating Junction Temperature

(•) Pulse width limited by safe operating area.

(*) Current Limited by Package

October 2002

.

Value

100

100

± 20

25

21

100

85

0.57

20

300

Unit

V

V

V

A

A

A

W

W/°C

V/ns

mJ

-55 to 175

°C

(1) ISD ≤25A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 10 A, VDD = 27V

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