STD25NF10LT4 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

View to exact match

STD25NF10LT4

N-CHANNEL 100V - 0.030 Ω - 25A DPAK LOW GATE CHARGE STripFET™ II POWER MOSFET

STMicroelectronics 

STD25NF10L

THERMAL DATA

Rthj-case Thermal Resistance Junction-case

Max

1.5

Rthj-pcb Thermal Resistance Junction-pcb(#)

Max

50

Tl

Maximum Lead Temperature For Soldering Purpose

275

(#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu.

°C/W

°C/W

°C

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

100

V

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16 V

±100

nA

ON (*)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS

ID = 250 µA

VGS = 10 V

VGS = 4.5 V

ID = 12.5 A

ID = 12.5 A

Min.

1

Typ.

0.030

0.035

Max.

2.5

0.035

0.040

Unit

V

Ω

Ω

DYNAMIC

Symbol

gfs (*)

Ciss

Coss

Crss

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS = 15 V

ID = 12.5 A

VDS = 25V f = 1 MHz VGS = 0

Min.

Typ.

24

1710

250

110

Max.

Unit

S

pF

pF

pF

2/9

Share Link: