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Part Name
Description
K3299-Z View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
View to exact match
K3299-Z
2SK3299, K3299 / N-ch Power MOS FET
NEC => Renesas Technology
K3299-Z Datasheet PDF : 8 Pages
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SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
100
10
I
AS
= 10 A
E
AS
= 66.7 mJ
1.0
R
G
= 25
Ω
V
DD
= 150 V
V
GS
= 20
V
→
0 V
0.1
Starting T
ch
= 25
˚C
10
µ
100
µ
1m
L - Inductive Load - H
10m
2SK3299
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
V
DD
= 150 V
R
G
= 25
Ω
100
V
GS
= 20 V
→
0 V
I
AS
≤
10 A
80
60
40
20
0
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature -
˚C
6
Data Sheet D14060EJ1V0DS00
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