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K3299 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K3299
NEC
NEC => Renesas Technology NEC
K3299 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK3299
ELECTRICAL CHARACTERISTICS(TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain Leakage Current
IDSS
VDS = 600 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
Drain to Source On-state Resistance
| yfs |
RDS(on)
VDS = 10 V, ID = 5.0 A
VGS = 10 V, ID = 5.0 A
Input Capacitance
Output Capacitance
Ciss
Coss
VDS = 10 V
VGS = 0 V
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
f = 1 MHz
VDD = 150 V, ID = 5.0 A
VGS(on) = 10 V
RG = 10
VDD = 450 V
VGS = 10 V
ID = 10 A
IF = 10 A, VGS = 0 V
IF = 10 A, VGS = 0 V
Reverse Recovery Charge
Qrr
di/dt = 50 A/µs
MIN.
2.5
3.2
TYP.
0.68
1580
280
25
27
17
66
24
34
8.2
12.3
1.0
1.9
12
MAX.
100
±100
3.5
0.75
UNIT
µA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
µs
µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
L
PG.
50
VDD
VGS = 20 0 V
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1 %
RL
VGS
VGS
Wave Form
010 %
VGS(on) 90 %
VDD
ID
90 %
ID
ID
0 10 %
Wave Form
90 %
10 %
td(on) tr td(off) tf
ton
toff
2
Data Sheet D14060EJ1V0DS00
 

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