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K3299-S View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K3299-S
NEC
NEC => Renesas Technology NEC
K3299-S Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3299
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3299 is N-Channel MOS FET device that features
a low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge
QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)
Gate voltage rating ±30 V
Low on-state resistance
RDS(on) = 0.75 MAX. (VGS = 10 V, ID = 5.0 A)
Avalanche capability ratings
Surface mount package available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3299
TO-220AB
2SK3299-S
TO-262
2SK3299-ZJ
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
600
V
±30
V
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±10
A
±40
A
Total Power Dissipation (TA = 25°C) PT1
1.5
W
Total Power Dissipation (TC = 25°C) PT2
75
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150 °C
Single Avalanche Current Note2
IAS
10
A
Single Avalanche Energy Note2
EAS
66.7
mJ
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14060EJ1V0DS00 (1st edition)
The mark shows major revised points.
©
1999,2000
Date Published April 2000 NS CP(K)
Printed in Japan
 

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