NE32484A-T1 View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

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NE32484A-T1

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NEC => Renesas Technology 

DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE32484A

C to Ku BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

DESCRIPTION

The NE32484A is a Hetero Junction FET that utilizes the

hetero junction to create high mobility electrons. Its excellent

low noise and high associated gain make it suitable for DBS,

TVRO and another commercial systems.

FEATURES

• Super Low Noise Figure & High Associated Gain

NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz

• Gate Length : Lg ≤ 0.25 µm

• Gate Width : Wg = 200 µm

ORDERING INFORMATION

PART NUMBER

NE32484A-SL

NE32484A-T1

NE32484A-T1A

SUPPLYING

FORM

STICK

Tape & reel

1000 pcs./reel

Tape & reel

5000 pcs./reel

LEAD LENGTH MARKING

L = 1.7 mm MIN.

L = 1.0 ± 0.2 mm

T

L = 1.0 ± 0.2 mm

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage

VDS

4.0

V

Gate to Source Voltage

VGS

–3.0

V

Drain Current

ID

IDSS

mA

Gate Current

IG

100

µA

Total Power Dissipation

Ptot

165

mW

Channel Temperature

Tch

150

˚C

Storage Temperature

Tstg –65 to +150 ˚ C

RECOMMENDED OPERATING CONDITION (TA = 25 ˚C)

PACKAGE DIMENSIONS

(Unit: mm)

1.78 ±0.2

1

L

L

T

2

4

L

L

3

0.5 TYP.

1. Source

2. Drain

3. Source

4. Gate

CHARACTERISTIC

Drain to Source Voltage

Drain Current

Input Power

SYMBOL

VDS

ID

Pin

MIN.

TYP.

2

10

MAX.

3

20

0

Unit

V

mA

dBm

Document No. P11785EJ3V0DS00 (3rd edition)

(Previous No. TC-2316)

Date Published July 1996 P

©

Printed in Japan

1991

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