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K1958 Просмотр технического описания (PDF) - NEC => Renesas Technology

Номер в каталогеКомпоненты Описаниепроизводитель
K1958 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING NEC
NEC => Renesas Technology NEC
K1958 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
TA = – 25˚C
20
ID = 10 mA
1 mA
10
0
1234567
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
TA = 75 ˚C
20
ID = 10 mA
1 mA
10
0
1234567
VGS - Gate to Source Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
50
VGS = 0
f = 1 MHz
20
10
Ciss
Coss
5
2
1
Crss
0.5
12
5 10 20
50
VDS - Drain to Source Voltage - V
4
2SK1958
DRAIN TOSOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
TA = 25 ˚C
20
ID = 10 mA
1 mA
10
0
1234567
VGS - Gate to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD
VOLTAGE
200
100
50
20
10
5
2
1
0
0.2
0.4
0.6
0.8
1.0
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
500
VDD = 3 V
VGS(on) = 3 V
tr
200
100
50
tf
td(on)
20
td(off)
10
20
50 100 200
500
ID - Drain Current - mA
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