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K1958-T1 Просмотр технического описания (PDF) - NEC => Renesas Technology

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K1958-T1 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING NEC
NEC => Renesas Technology NEC
K1958-T1 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
30
60
90
120
150
TA - Ambient Temperature - ˚C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
500
VDS = 3 V
200
TA = –25 ˚C
25 ˚C
75 ˚C
100
50
20
10
5
10
20
50
100 200
ID - Drain Current - mA
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
200
TA = 25 ˚C
100
50
20 VGS = 1.5 V
10
2.5 V
5
4V
0.5 1 2 5 10 20 50 100 200 500
ID - Drain Current - mA
2SK1958
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
2.0 V
40
1.8 V
30
20
1.6 V
10
1.4 V
VGS = 1.2 V
0
1
2
3
4
5
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
200
TA = –25 ˚C
100
50
VGS = 1.5 V
20
10
2.5 V
5
4.0 V
0.5 1 2 5 10 20 50 100 200 500
ID - Drain Current - mA
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
200
TA = 75 ˚C
100
50
VGS = 1.5 V
20
10
2.5 V
4.0 V
5
0.5 1 2 5 10 20 50 100 200 500
ID - Drain Current - mA
3
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