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K1958-T2 Просмотр технического описания (PDF) - NEC => Renesas Technology

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K1958-T2 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING NEC
NEC => Renesas Technology NEC
K1958-T2 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1958
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK1958 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
FEATURES
• Gate can be driven by 1.5 V
• Because of its high input impedance, there’s no need to
consider drive current
• Since bias resistance can be omitted, the number of
components required can be reduced
PACKAGE DIMENSIONS (in mm)
2.1 ±0.1
1.25 ±0.1
G
S
D
Marking
EQUIVALENT CURCUIT
Drain (D)
Marking: G21
Gate (G)
Gate
protection
diode
Source (S)
Internal
diode
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Voltage
VDSS
VGS = 0
Gate to Source Voltage
VGSS
VDS = 0
Drain Current (DC)
ID(DC)
Drain Current (Pulse)
ID(pulse)
PW 10 ms, duty cycle 50 %
Total Power Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
RATING
16
±7.0
±0.1
±0.2
150
150
–55 to +150
UNIT
V
V
A
A
mW
˚C
˚C
Document No. D11221EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
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