STA014T View Datasheet(PDF) - STMicroelectronics
Part Name
Description
View to exact match
STA014T
STMicroelectronics
STA014T Datasheet PDF : 45 Pages
| |||
STA014-STA014B-STA014T
1. ELECTRICAL CHARACTERISTICS: VDD = 3.3V ±0.3V; Tamb = 0 to 70°C; Rg = 50Ω unless otherwise
specified
DC OPERATING CONDITIONS
Symbol
VDD
Tj
Parameter
Power Supply Voltage
Operating Junction Temperature
Value
2.4 to 3.6V
-20 to 125°C
GENERAL INTERFACE ELECTRICAL CHARACTERISTICS
Symbol
IIL
IIH
Vesd
Parameter
Low Level Input Current
Without pull-up device
High Level Input Current
Without pull-up device
Electrostatic Protection
Test Condition
Vi = 0V
Vi = VDD
Leakage < 1µA
Min. Typ. Max. Unit Note
-10
10
µA
1
-10
10
µA
1
2000
V
2
Note 1: The leakage currents are generally very small, < 1nA. The value given here is a maximum that can occur after an electrostatic stress
on the pin.
Note 2: Human Body Model.
DC ELECTRICAL CHARACTERISTICS
Symbol
VIL
VIH
Vol
Voh
Parameter
Low Level Input Voltage
High Level Input Voltage
Low Level Output Voltage
High Level Output Voltage
Test Condition
Iol = Xma
Min. Typ.
0.8*VDD
0.85*VDD
Max.
0.2*VDD
0.4V
Unit
V
V
V
V
Note
1, 2
1, 2
Note 1: Takes into account 200mV voltage drop in both supply lines.
Note 2: X is the source/sink current under worst case conditions and is reflected in the name of the I/O cell according to the drive capability.
Symbol
Ipu
Rpu
Parameter
Pull-up current
Equivalent Pull-up
Resistance
Test Condition
Vi = 0V; pin numbers 7, 24
and 26
Note 1: Min. condition: VDD = 2.7V, 125°C Min process
Max. condition: VDD = 3.6V, -20°C Max.
POWER DISSIPATION
Symbol
PD
Parameter
Power Dissipation
@ VDD = 2.4V
Test Condition
Sampling_freq ≤24 kHz
Sampling_freq ≤32 kHz
Sampling_freq ≤48 kHz
Min.
-25
Min.
Typ.
-66
50
Typ.
76
79
85
Max.
-125
Max.
Unit
µA
kΩ
Unit
mW
mW
mW
Note
1
Note
6/45
|
|
Share Link: