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K3109-ZJ View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K3109-ZJ
NEC
NEC => Renesas Technology NEC
K3109-ZJ Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK3109
 ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 200 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 5.0 A
VGS = 10 V, ID = 5.0 A
Input Capacitance
Ciss
VDS = 10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 100 V, ID = 5.0 A,
Rise Time
Turn-off Delay Time
tr
td(off)
VGS = 10 V,
RG = 10
Fall Time
tf
Total Gate Charge
QG
VDD = 160 V,
Gate to Source Charge
QGS
VGS = 10 V,
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 10 A
IF = 10 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 10 A, VGS = 0 V,
Qrr
di/dt = 50 A/µs
Note Pulsed
MIN.
2.5
1.5
TYP.
0.32
400
110
55
12
34
40
20
18
3.5
10
1.0
250
1.0
MAX.
100
±10
4.5
0.4
UNIT
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
L
PG.
50
VDD
VGS = 20 0 V
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VGS
90%
ID
90%
ID
Wave Form
0 10%
td(on)
ID
tr td(off)
90%
10%
tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50
VDD
2
Data Sheet D13332EJ3V0DS
 

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