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PKD01EP View Datasheet(PDF) - Analog Devices

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PKD01EP Datasheet PDF : 18 Pages
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PKD01–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = ؎15 V, CH = 1000 pF, TA = 25؇C, unless otherwise noted.)
Parameter
Symbol Conditions
PKD01A/E
PKD01F
Min Typ Max Min Typ Max Unit
gm AMPLIFIERS A, B
Zero-Scale Error
VZS
24
Input Offset Voltage
VOS
23
Input Bias Current
IB
80 150
Input Offset Current
IOS
20 40
Voltage Gain
AV
RL = 10 k, VO = ± 10 V
18 25
Open-Loop Bandwidth
BW
AV = 1
0.4
Common-Mode Rejection Ratio CMRR –10 V VCM +10 V
80 90
Power Supply Rejection Ratio PSRR ± 9 V VS ≤ ± 18 V
Input Voltage Range1
VCM
86 96
± 10 ± 11
Slew Rate
SR
0.5
Feedthrough Error1
VIN = 20 V, DET = 1, RST = 0 66 80
Acquisition Time to
0.1% Accuracy1
tAQ
20 V Step, AVCL = +1
41 70
Acquisition Time to
tAQ
20 V Step, AVCL = +1
45
0.01% Accuracy1
3 7 mV
3 6 mV
80 250 nA
20 75 nA
10 25
V/mV
0.4
MHz
74 90
dB
76 96
dB
± 10 ± 11
V
0.5
V/µs
66 80
dB
41 70 µs
45
µs
COMPARATOR
Input Offset Voltage
Input Bias Current
Input Offset Current
Voltage Gain
Common-Mode Rejection Ratio
VOS
IB
IOS
AV
CMRR
Power Supply Rejection Ratio PSRR
Input Voltage Range1
VCM
Low Output Voltage
VOL
“OFF” Output Leakage Current IL
Output Short-Circuit Current ISC
Response Time2
tS
2 kPull-Up Resistor to 5 V
–10 V VCM +10 V
± 9 V VS ≤ ± 18 V
ISINK 5 mA, Logic GND = 0 V
VOUT = 5 V
VOUT = 5 V
5 mV Overdrive, 2 kPull-Up
Resistor to 5 V
0.5 1.5
700 1000
75 300
5 7.5
82 106
76 90
± 11.5 ± 12.5
–0.2 +0.15 +0.4
25 80
7 12 45
150
1 3 mV
700 1000 nA
75 300 nA
3.5 7.5
V/mV
82 106
dB
76 90
dB
± 11.5 ± 12.5
V
–0.2 +0.15 +0.4 V
25 80 µA
7 12 45 mA
150
ns
DIGITAL INPUTS – RST, DET2
Logic “1” Input Voltage
VH
Logic “0” Input Voltage
VL
Logic “1” Input Current
IINH
Logic “0” Input Current
IINL
VH = 3.5 V
VL = 0.4 V
2
2
V
0.8
0.8 V
0.02 1
0.02 1 µA
1.6 10
1.6 10 µA
MISCELLANEOUS
Droop Rate3
Output Voltage Swing:
Amplifier C
Short-Circuit Current:
Amplifier C
Switch Aperture Time
Switch Switching Time
Slew Rate: Amplifier C
Power Supply Current
VDR
TJ = 25°C
TA = 25°C
VOP
DET = 1
RL = 2.5 k
ISC
tAP
ts
SR
RL = 2.5 k
ISY
No Load
0.01 0.07
0.02 0.15
± 11.5 ± 12.5
7 15 40
75
50
2.5
57
0.01 0.1 mV/ms
0.03 0.20 mV/ms
± 11 ± 12
V
7 15 40 mA
75
ns
50
ns
2.5
V/µs
6 9 mA
NOTES
1Guaranteed by design.
2DET = 1, RST = 0.
3Due to limited production test times, the droop current corresponds to junction temperature (TJ). The droop current vs. time (after power-on) curve clarified this point. Since
most devices (in use) are on for more than 1 second, ADI specifies droop rate for ambient temperature (TA) also. The warmed-up (TA) droop current specification is correlated
to the junction temperature (TJ) value. ADI has a droop current cancellation circuit that minimizes droop current at high temperature. Ambient (TA) temperature specifications
are not subject to production testing.
Specifications subject to change without notice.
–2–
REV. A
 

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