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HMC282 View Datasheet(PDF) - Hittite Microwave

Part Name
Description
View to exact match
HMC282 Datasheet PDF : 6 Pages
1 2 3 4 5 6
v01.0700
MICROWAVE CORPORATION
Typical Applications
1
The HMC282 LNA is ideal for:
• Millimeterwave Point-to-Point Radios
• VSAT
• SATCOM
Functional Diagram
HMC282
GaAs MMIC LOW NOISE
AMPLIFIER, 36 - 40 GHz
Features
Noise Figure: 3.5 dB
Stable Gain vs. Temperature: 26 dB ± 1.2 dB
Small Size: 1.11 mm x 2.07 mm
General Description
The HMC282 chip is a four stage GaAs MMIC
Low Noise Amplifier (LNA) which covers the
frequency range of 36 to 40 GHz. The chip
can easily be integrated into Multi-Chip Modules
(MCMs) due to its small (2.30 mm2) size. The chip
utilizes a GaAs PHEMT process offering 26 dB
gain from a bias supply of +3.5V @ 90mA with a
noise figure of 3.5 dB. All data is with the chip in
a 50 ohm test fixture connected via ribbon bonds
of minimal length. The HMC282 may be used in
conjunction with HMC259 mixer to realize a mil-
limeterwave system receiver.
Electrical Specifications, TA = +25° C, Vdd= +3.5V*, ldd = 90 mA
Parameter
Min.
Typ.
Max.
Min.
Typ.
Frequency Range
36 - 40
37 - 39
Gain
21
27
21
26
Gain Flatness (Any 1 GHz BW)
±1
±1
Noise Figure
3.8
5.8
3.5
Input Return Loss
7
6
Output Return Loss
5
5
Reverse Isolation
40
46
40
46
Output Power for 1 dB Compression (P1dB)
5
9
5
9
Saturated Output Power (Psat)
12
12
Output Third Order Intercept (IP3)
18
25
21
27
Supply Current (Idd)
(Vdd = +3.5V, Vgg1, 2, 3, 4 = -0.15V Typ.)
90
140
90
*Vdd = +3.5V, adjust Vg1 & Vg2 between -2.0 to +0.4V to achieve ldd = 90 mA typical.
Max.
5.3
140
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
mA
1 - 62
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
 

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