J02015A View Datasheet(PDF) - Advanced Semiconductor
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J02015A Datasheet PDF : 1 Pages
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J02015A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI J02015A is Designed for
High Power Class C Amplifier in, 225
to 400 MHz Military Communication
Equipment.
FEATURES:
• Internal Input Matching Network
• PG = 8.4 dB at 70 W/400 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
8.0 A
VCBO
60 V
VCEO
30 V
VEBO
4.0 V
PDISS
220 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
1.25 °C/W
PACKAGE STYLE .500 6L FLG
C
A
2x ØN
FULL R
D
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
B
E
.7 2 5 /1 8 ,4 2
G
F
H
M IN IM U M
inches / mm
.150 / 3.43
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.970 / 24.64
.090 / 2.29
.150 / 3.81
I
J
.045 / 1.14
.125 / 3.18
.725 / 18.42
.120 / 3.05
M
K
L
M A X IM U M
inches / mm
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCES
IC = 50 mA
BVEBO
IE = 10 mA
ICBO
VCB = 30 V
hFE
VCE = 5.0 V
IC = 2.0 A
MINIMUM TYPICAL MAXIMUM
30
60
4.0
5.0
20
80
UNITS
V
V
V
mA
---
COB
VCB = 28 V
f = 1.0 MHz
80
pF
PG
VCC = 28 V
ηD
POUT = 70 W
f = 400 MHz
8.4
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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