datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

Z0103MN View Datasheet(PDF) - ON Semiconductor

Part Name
Description
View to exact match
Z0103MN Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Z0103MN, Z0107MN, Z0109MN
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C IDRM, IRRM
TJ = +125°C
ON CHARACTERISTICS
Peak OnState Voltage
(ITM = "1.4 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
VTM
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 30 Ohms)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
Z0103MN
IGT
0.15
0.15
0.15
0.25
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 30 Ohms)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
Z0107MN
IGT
0.15
0.15
0.15
0.25
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 30 Ohms)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
Z0109MN
IGT
0.15
0.15
0.15
0.25
Latching Current (VD = 12 V, IG = 1.2 x IGT)
MT2(+), G(+) All Types
MT2(+), G() All Types
MT2(), G() All Types
MT2(), G(+) All Types
Z0103MN
IL
Latching Current (VD = 12 V, IG = 1.2 x IGT)
MT2(+), G(+) All Types
MT2(+), G() All Types
MT2(), G() All Types
MT2(), G(+) All Types
Z0107MN
IL
Latching Current (VD = 12 V, IG = 1.2 x IGT)
MT2(+), G(+) All Types
MT2(+), G() All Types
MT2(), G() All Types
MT2(), G(+) All Types
Z0109MN
IL
Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 30 Ohms)
Gate NonTrigger Voltage (VD = 12 V, RL = 30 Ohms, TJ = 125°C)
All Four Quadrants
VGT
VGD
0.2
Holding Current
(VD = 12 Vdc, Initiating Current = 50 mA, Gate Open)
(Z0103MA)
IH
(Z0107MA, Z0109MA)
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 0.84 A, Commutating dv/dt = 1.5 V/ms, Gate Open,
TJ = 110°C, f = 250 Hz, with Snubber)
di/dt(c)
1.6
Critical Rate of Rise of OffState Voltage (VD = 67% Rated VDRM, Exponential
Waveform, Gate Open, TJ = 110°C)
Z0103MN
Z0107MN
Z0109MN
dv/dt
10
30
20
60
50
75
Repetitive Critical Rate of Rise of OnState Current, TJ = 125°C
Pulse Width = 20 ms, IPKmax = 15 A, diG/dt = 1 A/ms, f = 60 Hz
di/dt
Max Unit
5.0
mA
500
mA
1.56
V
mA
3.0
3.0
3.0
5.0
mA
5.0
5.0
5.0
7.0
mA
10
10
10
10
mA
7.0
15
7.0
7.0
mA
10
20
10
10
mA
15
25
15
15
1.3
V
V
7.0
mA
10
A/ms
V/ms
20
A/ms
http://onsemi.com
2
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]