KTB1124 View Datasheet(PDF) - KEC
Part Name
Description
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KTB1124 Datasheet PDF : 3 Pages
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SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Complementary to KTD1624.
KTB1124
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current(Pulse)
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PC*
Tj
-60
-50
-6
-3
-6
-600
500
1
150
Storage Temperature Range
Tstg
-55 150
* : Package mounted on ceramic substrate(250mm2 0.8t)
UNIT
V
V
V
A
A
mA
mW
W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
ICBO
VCB=-40V, IE=0
IEBO
VEB=-4V, IC=0
hFE(1) (Note) VCE=-2V, IC=-100
hFE (2)
VCE=-2V, IC=-3A
VCE(sat)
IC=-2A, IB=-100
VBE(sat)
IC=-2A, IB=-100
fT
VCE=-10V, IC=-50
Cob
VCB=-10V, f=1
Turn-on Time
ton
Switching
Storage Time
tstg
Time
Fall Time
tf
Note : hFE (1) Classification A:100 200, B:140 280, C:200 400
2008. 3. 11
Revision No : 4
MIN.
-
-
100
35
-
-
-
-
TYP.
-
-
-
-
-0.35
-0.94
150
39
MAX. UNIT.
-1
-1
400
-
-0.7
V
-1.2
V
-
-
-
70
-
-
450
-
nS
-
35
-
1/3
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