K2415-Z-E2(JM) View Datasheet(PDF) - NEC => Renesas Technology
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K2415-Z-E2(JM) Datasheet PDF : 7 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2415,2415-Z
SWITCHING
N-CHANNEL POWER MOS FET
Description
The 2SK2415 is N-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
Features
• Low on-state resistance
RDS(on)1 = 0.10 Ω MAX. (VGS = 10 V, ID = 4.0 A)
RDS(on)2 = 0.15 Ω MAX. (VGS = 4 V, ID = 4.0 A)
• Low Ciss: Ciss = 570 pF TYP.
QUALITY GRADE
Standard
Please refer to "Quality Grades On NEC Semiconductor Devices" (Document
number: C11531E) published by NEC Corporation to know the specification
of quality grade on the devices and its recommended applica5tions.
ABSOLUTE MAXIMUM RATINGS (TA = 25˚C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse)Note 1
ID(DC)
ID(pulse)
±8.0
A
±32
A
Total Power Dissipation (TC = 25˚C) PT1
20
W
Total Power Dissipation (TA = 25˚C) PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche CurrentNote 2
Single Avalanche EnergyNote 2
Tstg
–55 to +150 °C
IAS
8.0
A
EAS
6.4
mJ
Note 1 PW ≤ 10 µs, Duty Cycle ≤ 1%
2 Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V
PACKAGE DRAWINGS
(Unit : mm)
TO-251 (MP-3)
6.5 ±0.2
5.0 ±0.2
4
2.3 ±0.2
0.5 ±0.1
123
1.1 ±0.2
2.3 2.3
0.5
+0.2
−0.1
0.5
+0.2
−0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-252 (MP-3Z)
6.5 ±0.2
5.0 ±0.2
4
2.3 ±0.2
0.5 ±0.1
123
1.1 ±0.2
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13207EJ2V0DS00 (2nd edition)
Date Published August 2004 N CP(K)
Printed in Japan
The mark shows major revised points.
1994
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