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FQD2N60C(2013) View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQD2N60C
(Rev.:2013)
Fairchild
Fairchild Semiconductor Fairchild
FQD2N60C Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Package Marking and Ordering Information
Device Marking
FQD2N60C
FDU2N60C
Device
FQD2N60C
FDU2N60C
Package
D-PAK
I-PAK
Reel Size
-
-
Tape Width
-
-
Quantity
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
600
BVDSS/ Breakdown Voltage Temperature
TJ
Coefficient
ID = 250 µA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
VDS = 480 V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 µA
2.0
VGS = 10 V, ID = 0.95 A
--
gFS
Forward Transconductance
VDS = 40 V, ID = 0.95 A
(Note 4)
--
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
--
Crss
Reverse Transfer Capacitance
--
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300 V, ID = 2 A,
RG = 25
VDS = 480 V, ID = 2 A,
VGS = 10 V
--
--
--
(Note 4, 5)
--
--
--
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 1.9 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2 A,
dIF / dt = 100 A/µs
--
--
--
--
(Note 4)
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 56mH, IAS = 2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 2A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ
--
0.6
--
--
--
--
--
3.6
5.0
180
20
4.3
9
25
24
28
8.5
1.3
4.1
--
--
--
230
1.0
Max Unit
--
V
--
V/°C
1
µA
10
µA
100
nA
-100
nA
4.0
V
4.7
--
S
235
pF
25
pF
5.6
pF
28
ns
60
ns
58
ns
66
ns
12
nC
--
nC
--
nC
1.9
A
7.6
A
1.4
V
--
ns
--
µC
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
2
www.fairchildsemi.com
 

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