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MMDT3906 View Datasheet(PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

Part Name
Description
View to exact match
MMDT3906
Jiangsu
Jiangsu Changjiang Electronics Technology Co., Ltd Jiangsu
MMDT3906 Datasheet PDF : 4 Pages
1 2 3 4
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T SOT-363 Plastic-Encapsulate Transistors
MMDT3906 DUAL TRANSISTOR (PNP+PNP)
SOT-363
FEATURES
·Epitaxial planar die construction
·Ideal for low power amplification and switching
MARKING:K3N
MAXIMUM RATINGS(Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance. Junction to Ambient Air
Junction Temperature
Storage Temperature
Value
-40
-40
-5
-0.2
0.2
625
150
-55-150
ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Base cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Delay time
Rise time
Storage time
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
NF
td
tr
tS
tf
Test conditions
IC=-10μA,IE=0
IC=-1mA,IB=0
IE=-10μA,IC=0
VCE=-30V,VEB(OFF)=-3V
VEB=-5V,IC=0
VCE=-1V,IC=-0.1mA
VCE=-1V,IC=-1mA
VCE=-1V,IC=-10mA
VCE=-1V,IC=-50mA
VCE=-1V,IC=-100mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
VCE=-20V,IC=-10mA,f=100MHz
VCB=-5V,IE=0,f=1MHz
VCE=-5V,Ic=-0.1mA,f=1KHz,Rg=1K
VCC=-3V, VBE=0.5V
IC=-10mA , IB1=-IB2=-1mA
VCC=-3V, IC=-10mA
IB1=-IB2=- 1mA
Min
-40
-40
-5
60
80
100
60
30
-0.65
250
Units
V
V
V
A
W
/W
Typ Max Unit
V
V
V
-50 nA
-50 nA
300
-0.25
-0.4
-0.85
-0.95
4.5
4
35
35
225
75
V
V
V
V
MHz
pF
dB
nS
nS
nS
nS
www.cj-elec.com
1
DA,JMuanr,,22001146
 

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