MMDT3906 View Datasheet(PDF) - Galaxy Semi-Conductor
Part Name
Description
View to exact match
MMDT3906 Datasheet PDF : 4 Pages
| |||
Production specification
Dual PNP Small Signal Surface Mount Transistor MMDT3906
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. MAX.
V(BR)CBO Collector-base breakdown voltage IC=-10μA,IE=0
-40
Collector-emitter breakdown
V(BR)CEO
voltage
IC=-1mA,IB=0
-40
UNIT
V
V
V(BR)EBO Emitter-base breakdown voltage IE=-10μA,IC=0
-5
V
ICEX
collector cut-off current
VCE=-30V,VEB(OFF)=-3.0V
- -0.05 μA
IBL
hFE
VCE(sat)
VBE(sat)
Cobo
Cibo
Base cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
Output capacitance
Input capacitance
VCE=-30V,VEB(OFF)=-3.0V
VCE =-1V,IC= -0.1mA
VCE =-1V,IC =-1mA
VCE =-1V,IC =-10mA
VCE =-1V,IC =-50mA
VCE =-1V,IC =-100mA
IC =-10mA,IB =-1mA
IC =-50mA,IB =-5mA
IC =-10mA,IB =-1mA
IC =-50mA, IB =-5mA
IE =0,VCB=-5V; f =1MHz
IC=0, VEB =-0.5V; f =1MHz
-
60
80
100
60
30
-
-
-650
-
-
-
-0.05 μA
-
-
300
-
-
-250 mV
-400 mV
-850 mV
-950 mV
4.5 pF
10 pF
fT
transition frequency
IC=-1.0mA,VCE=-10V,f=1.0KHz 250
- MHz
NF
noise figure
td
delay time
tr
rise time
ts
storage time
tf
fall time
IC=-0.1mA,VCE=-20V,f=100MHz -
VCC=-3V,VBE(off)=0.5V IC=-10mA
-
IB1=-IB2=-1mA
-
VCC=-3V,IC=-10mA
-
IB1=-IB2=-1mA
-
4 dB
35 ns
35 ns
225 ns
75 ns
G003
Rev.A
www.gmicroelec.com
2
|
|
Share Link: 