FDN306P View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
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FDN306P Datasheet PDF : 5 Pages
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Typical Characteristics
5
ID = -2.6A
4
3
2
1
0
0
3
VDS = -4V
-6V
-8V
6
9
12
15
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = -4.5V
0.1
SINGLE PULSE
RθJA = 270oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
DC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2000
1600
1200
CISS
f = 1 MHz
VGS = 0 V
800
COSS
400
CRSS
0
0
3
6
9
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
30
25
20
15
10
5
0
0.001
0.01
SINGLE PULSE
RθJA = 270°C/W
TA = 25°C
0.1
1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 270oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN306P Rev D W)
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