BUK101-50GS View Datasheet(PDF) - Philips Electronics
Part Name
Description
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BUK101-50GS Datasheet PDF : 11 Pages
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Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK101-50GS
TRANSFER CHARACTERISTICS
Tmb = 25 ˚C
SYMBOL PARAMETER
gfs
Forward transconductance
ID(SC)
Drain current1
CONDITIONS
VDS = 10 V; IDM = 13 A tp ≤ 300 µs;
δ ≤ 0.01
VDS = 13 V; VIS = 10 V
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C. RI = 50 Ω . Refer to waveform figures and test circuits.
SYMBOL PARAMETER
CONDITIONS
td on
Turn-on delay time
tr
Rise time
td off
Turn-off delay time
tf
Fall time
td on
Turn-on delay time
tr
Rise time
td off
Turn-off delay time
tf
Fall time
VDD = 13 V; VIS = 10 V
resistive load RL = 2.1 Ω
VDD = 13 V; VIS = 0 V
resistive load RL = 2.1 Ω
VDD = 10 V; VIS = 10 V
inductive load IDM = 6 A
VDD = 10 V; VIS = 0 V
inductive load IDM = 6 A
REVERSE DIODE LIMITING VALUE
SYMBOL PARAMETER
IS
Continuous forward current
CONDITIONS
Tmb ≤ 25 ˚C; VIS = 0 V
REVERSE DIODE CHARACTERISTICS
Tmb = 25 ˚C
SYMBOL PARAMETER
CONDITIONS
VSDS
Forward voltage
trr
Reverse recovery time
IS = 29 A; VIS = 0 V; tp = 300 µs
not applicable2
ENVELOPE CHARACTERISTICS
SYMBOL PARAMETER
Ld
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN. TYP. MAX. UNIT
10 16
-
S
-
80
-
A
MIN.
-
-
-
-
-
-
-
-
TYP.
1.5
6
18
9
2
1
22
1
MAX.
-
-
-
-
-
-
-
-
UNIT
µs
µs
µs
µs
µs
µs
µs
µs
MIN.
-
MAX.
29
UNIT
A
MIN.
-
-
TYP. MAX. UNIT
1.0 1.5 V
-
-
-
MIN. TYP. MAX. UNIT
-
3.5
-
nH
-
4.5
-
nH
-
7.5
-
nH
1 During overload before short circuit load protection operates.
2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
January 1993
4
Rev 1.200
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