IRF9150 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

View to exact match

IRF9150

-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

New Jersey Semiconductor 

IRF9150

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

Continuous Source to Drain Current

Pulse Source to Drain Current

(Note 3)

!SD

!SDM

Modified MOSFET Symbol

Showing the Integral

Reverse P-N Junction

Diode

>D

G

o

/IK

U1 i

fe

MIN TYP MAX UNITS

-

-

-25

A

-100

A

is

Source to Drain Diode Voltage(Note 2)

Reverse Recovery Time

Reverse Recovery Charge

VSD

trr

QRR

TC = 25°C, ISD = 25A, VGS = 0V (Figure 13)

Tj = 25°C, ISD= 25A, dlSD/dt = 100A/us

Tj = 25°C, ISD = 25A, dlSD/dt = 100A/ns

-

0.9 1.5

V

-

150 300

ns

0.3

0.7 1.5

nc

NOTES:

2. Pulse test: pulse width < 300u,s, duty cycle < 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 25V, starting Tj = 25°C, L = 3.2mH, RG = 25O, peak IAS = 25A See Figures 15, 16.

Typical Performance Curves unless otherwise Specified

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