IRF9150 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
View to exact match
IRF9150 Datasheet PDF : 3 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
IRF9150
-25A, -100V, 0.150 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Features
• -25A, -100V
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9150
TO-204AE
IRF9150
NOTE: When ordering, use the entire part number.
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AE
GATE
SOURCE (PIN 2)
NJ Semiconductors reserves the right to change test conditions, parameter limits and package dimensions without
not.ce. Intormatmn turn.shed b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of goin*
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered™™ Use
VI .Vnu4 onductors encournges customers to verify that datasheets are current before placing orders.
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