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SM8S10AHE3_A/I View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
SM8S10AHE3_A/I
VISHAYSEMICONDUCTOR
Vishay Semiconductors VISHAYSEMICONDUCTOR
SM8S10AHE3_A/I Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
SM8S10A thru SM8S43A
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
8.0
10 000
6.0
4.0
2.0
0
0
50
100
150
200
Case Temperature (°C)
Fig. 1 - Power Derating Curve
6000
5000
4000
3000
2000
1000
0
25
50
75
100
125
150
175
Case Temperature (°C)
Fig. 2 - Load Dump Power Characteristics
(10 ms Exponential Waveform)
150
tr = 10 μs
Peak Value
IPPM
100
TJ = 25 °C
Pulse Width (td) is
Defined as the Point
Where the Peak Current
Decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50
td
0
0
10
20
30
40
t - Time (ms)
Fig. 3 - Pulse Waveform
1000
10
100
Pulse Width (ms) - ½ IPP Exponential Waveform
Fig. 4 - Reverse Power Capability
100
10
1
RθJA
RθJC
0.1
0.01
0.01
0.1
1
10
100
t - Pulse Width (s)
Fig. 5 - Typical Transient Thermal Impedance
100 000
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at Zero Bias
Measured at Stand-Off
Voltage VWM
1000
10 15 20 25 30 35 40 45
VWM - Reverse Stand-Off Voltage (V)
Fig. 6 - Typical Junction Capacitance
Revision: 04-Nov-16
3
Document Number: 88387
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 

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