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S93VP662SI-2.7TE13 View Datasheet(PDF) - Summit Microelectronics

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S93VP662SI-2.7TE13
Summit-Microelectronics
Summit Microelectronics Summit-Microelectronics
S93VP662SI-2.7TE13 Datasheet PDF : 12 Pages
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SUMMIT
MICROELECTRONICS, Inc.
S93VP662/S93VP663
4K Serial E2PROM with a Precision Low-VCC Lockout Circuit
FEATURES
• Voltage Protection™
• Precision Low-VCC Write Lockout
• All Write Operations Inhibited When VCC Falls
below VLOCK
• One 3Volt and Two 5Volt System Versions
– VLOCK = 2.6V+.1V/-.05V
– VLOCK = 4.25V +.25V/-0.0V
– VLOCK = 4.50 +.25V/-0.0V
• 100% Compatible with Industry Standard
Microwire Devices
• 1,000,000 Program/Erase Cycles
• 100 Year Data Retention
• Commercial Industrial Temperature Range
OVERVIEW
The S93VP662 and S93VP663 are 4K-bit serial
E2PROM memories integrated with a precision VCC
sense circuit. The sense circuit will disable write opera-
tions whenever VCC falls below the VLOCK voltage. They
are fabricated using SUMMIT’s advanced CMOS
E2PROM technology and is suitable for both 3 and 5 volt
systems.
Both devices have 4k-bits of E2PROM memory that is
accessible via the industry standard microwire bus. The
S93VP662 is configured with an internal ORG pin tied
low providing an 8-bit byte organization and the
S93VP663 is configured with an internal ORG pin tied
high providing a 16-bit word organization. Both the
S93VP662 and S93VP663 have page write capability.
The devices are designed for a minimum 1,000,000
program/erase cycles and have data retention in ex-
cess of 100 years.
BLOCK DIAGRAM
VCC 8
5KHz
Oscillator
RESET
PULSE
GENERATOR
GND 5
CS 1
SK 2
DI 3
+
-
1.26V
MODE
DECODE
VTRIP
RESET
CONTROL
ADDRESS
DECODER
WRITE
CONTROL
DO 4
DATA I/O
MEMORY
ARRAY
4K-Bit
E2PROM
2019 ILL2 1.0
SUMMIT MICROELECTRONICS, Inc. • 300 Orchard City Drive, Suite 131 • Campbell, CA 95008 • Telephone 408-378-6461 • Fax 408-378-6586 • www.summitmicro.com
© SUMMIT MICROELECTRONICS, Inc. 1998
2019 1.1 5/15/98
Characteristics subject to change without notice
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