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IN74ACT21 View Datasheet(PDF) - Integral Corp.

Part NameDescriptionManufacturer
IN74ACT21 Dual 4-Input AND Gate High-Speed Silicon-Gate CMOS Integral
Integral Corp. Integral
IN74ACT21 Datasheet PDF : 4 Pages
1 2 3 4
IN74ACT21
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
VCC
VIN
VOUT
IIN
IOUT
ICC
PD
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
DC Output Sink/Source Current, per Pin
DC Supply Current, VCC and GND Pins
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
-0.5 to +7.0
V
-0.5 to VCC +0.5
V
-0.5 to VCC +0.5
V
±20
mA
±50
mA
±50
mA
750
mW
500
Tstg Storage Temperature
-65 to +150
°C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
260
°C
(Plastic DIP or SOIC Package)
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
VIN, VOUT
TJ
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Junction Temperature (PDIP)
TA
Operating Temperature, All Package Types
IOH
Output Current - High
IOL
Output Current - Low
tr, tf
Input Rise and Fall Time *
(except Schmitt Inputs)
* VIN from 0.8 V to 2.0 V
VCC =4.5 V
VCC =5.5 V
Min Max Unit
4.5
5.5
V
0
VCC
V
140
°C
-40
+85
°C
-24
mA
24
mA
0
10
ns/V
0
8.0
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range
GND(VIN or VOUT)VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC).
Unused outputs must be left open.
72
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