80C32E-12 View Datasheet(PDF) - Temic Semiconductors

Part Name

Description

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80C32E-12

CMOS 0 to 44 MHz Single Chip 8–bit Microntroller

Temic Semiconductors 

80C32/80C52

Electrical Characteristics

Absolute Maximum Ratings*

Ambiant Temperature Under Bias :

C = commercial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C

I = industrial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 85°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . –65°C to + 150°C

Voltage on VCC to VSS . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to + 7 V

Voltage on Any Pin to VSS . . . . . . . . . . . . . . . . . . . –0.5 V to VCC + 0.5 V

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W

* This value is based on the maximum allowable die temperature and

the thermal resistance of the package

* Notice

Stresses at or above those listed under “ Absolute Maximum Ratings”

may cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification is

not implied. Exposure to absolute maximum rating conditions may affect

device reliability.

DC Parameters

TA = 0°C to 70°C ; VSS = 0 V ; VCC = 5 V ± 10 % ; F = 0 to 44 MHz

TA = –40°C + 85°C ; VSS = 0 V ; VCC = 5 V ± 10 % ; F = 0 to 36 MHz

SYMBOL

PARAMETER

MIN

MAX UNIT TEST CONDITIONS

VIL

VIH

VIH1

VOL

VOL1

VOH

VOH1

IIL

ILI

ITL

IPD

RRST

CIO

ICC

Input Low Voltage

Input High Voltage (Except XTAL and RST)

Input High Voltage (for XTAL and RST)

Output Low Voltage (Port 1, 2 and 3)

Output Low Voltage (Port 0, ALE, PSEN)

Output High Voltage Port 1, 2, 3

Output High Voltage (Port 0, ALE, PSEN)

Logical 0 Input Current (Ports 1, 2 and 3)

Input leakage Current

Logical 1 to 0 Transition Current (Ports 1, 2 and 3)

Power Down Current

RST Pulldown Resistor

Capacitance of I/O Buffer

Power Supply Current

Freq = 1 MHz Icc op

Icc idle

Freq = 6 MHz Icc op

Icc idle

Freq ≥ 12 MHz Icc op = 1.25 Freq (MHz) + 5 mA

Icc idle = 0.36 Freq (MHz) + 2.7 mA

– 0.5

0.2 Vcc – 0.1 V

0.2 Vcc + 1.4 Vcc + 0.5 V

0.7 Vcc

Vcc + 0.5 V

0.3

V IOL = 100 µA

0.45

V IOL = 1.6 mA (note 2)

1.0

V IOL = 3.5 mA

0.3

V IOL = 200 µA

0.45

V IOL = 3.2 mA (note 2)

1.0

V IOL = 7.0 mA

Vcc – 0.3

V IOH = – 10 µA

Vcc – 0.7

Vcc – 1.5

V IOH = – 30 µA

V IOH = – 60 µA

VCC = 5 V ± 10 %

Vcc – 0.3

V IOH = – 200 µA

Vcc – 0.7

V IOH = – 3.2 mA

Vcc – 1.5

V IOH = – 7.0 mA

VCC = 5 V ± 10 %

– 50

µA Vin = 0.45 V

± 10

µA 0.45 < Vin < Vcc

– 650

µA Vin = 2.0 V

50

µA Vcc = 2.0 V to 5.5 V (note 1)

50

200

KOhm

10

pF fc = 1 MHz, Ta = 25_C

Vcc = 5.5 V

1.8

mA

1

mA

10

mA

4

mA

10

MATRA MHS

Rev. G (14 Jan. 97)

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