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KSB707 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
KSB707
Fairchild
Fairchild Semiconductor Fairchild
KSB707 Datasheet PDF : 4 Pages
1 2 3 4
KSB707/708
Low Frequency Power Amplifier
• Low Speed Switching
• Industrial Use
• Complement to KSD568/569
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
: B707
: B708
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
*Collector Current (Pulse)
IB
Base Current (DC)
PC
Collector Dissipation (TC=25°C)
PC
Collector Dissipation (Ta=25°C)
TJ
Junction Temperature
TSTG
Storage Temperature
* PW300µs, Duty Cycle10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
* Pulse Test: PW350µs, Duty Cycle2%
VCB = - 60V, IE = 0
VEB = - 5V, IC = 0
VCE = - 1V, IC = - 3A
VCE = - 1V, IC = - 5A
IC = - 5A, IB = - 0.5A
IC = - 5A, IB = - 0.5A
hFE Cassification
Classification
hFE1
R
40 ~ 80
O
60 ~ 120
Value
- 80
- 60
- 80
- 7.0
- 7.0
- 15
- 3.5
40
1.5
150
- 55 ~ 150
Units
V
V
V
V
A
A
A
W
W
°C
°C
Typ.
40
20
Max.
- 10
- 10
200
- 0.5
- 1.5
Units
µA
µA
V
V
Y
100 ~ 200
©2000 Fairchild Semiconductor International
Rev. A, February 2000
 

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