BSS84WT1 View Datasheet(PDF) - Willas Electronic Corp.
Part Name
Description
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| BSS84WT1 Datasheet PDF : 0 Pages | |||
WILLAS
P1o.0AwSUeRrFAMCEOMOSUFNTESTCH1OT3T0KY BmARARImER pREsC,TIF5IE0RSV-2o0Vl-t2s00V
SOD-123+ PACKAGE
FM120-M+
BSS84WTT1HRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
SOT−323
SOD-123H
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
• High surge capability.
• Guardring for overvoltage protection.
.087(2.20)
• Ultra high-speed switching.
.070(1.80)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
.056(1.40)
• Polarity : Indicated by cathode band
• Mounting Position : Any
.047(1.20)
0.031(0.8) Typ.
0.031(0.8) Typ.
.010(0.25)
.003(0.08)
Dimensions in inches and (millimeters)
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resis.0tiv0e4o(f0in.1d0uc)tMiveAlXoa. d.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
12
13
14
15
16
VRRM
20
30
40
50
60
VRMS .0161(40.40) 21
28
35
42
VDC .0082(00.20) 30
40
50
60
18
10
115 120
80
100
150
200 Volts
56
70
105
140 Volts
80
100
150
200 Volts
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO
1.0
Dimensions in inches and (millimeters)
IFSM
30
Amps
Amps
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction CapacitSanOcLe D(NEoRteI1N)G FOOTPRINT* CJ
Operating Temperature Range
0.65 TJ
-55 to +125
40
℃/W
1M2A0 RKGINEGNE-D5R5IAItCoG+R1A50M
PF
℃
Storage Temperature R0a.6n5ge
0.025
0.025TSTG
- 65 to +175
℃
XXM
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
VF
0.10.I79R5
0.50
0.70
1 0.85
0.9
0.5
XX
M
10
= Specific Device Code
= Date Code
0.92 Volts
mAmps
NOTES:
0.9
1- Measured at 1 MHZ 0a.n0d3a5pplied reverse voltage of 4.0 VDC.
2- Thermal Resistance From0J.u7nction to Ambient
0.028
ǒ Ǔ SCALE 10:1
mm
inches
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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