S8GCHM6G View Datasheet(PDF) - Taiwan Memory Technology
Part Name
Description
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S8GCHM6G Datasheet PDF : 4 Pages
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S8GC - S8MC
Taiwan Semiconductor
CREAT BY ART
8A, 400V - 1000V Surface Mount Glass Passivated Rectifiers
FEATURES
- Low forward voltage drop
- Ideal for automated placement
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.27 g (approximately)
DO-214AB (SMC)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL S8GC
S8JC
S8KC
Maximum repetitive peak reverse voltage
VRRM
400
600
800
Maximum RMS voltage
VRMS
280
420
560
Maximum DC blocking voltage
VDC
400
600
800
Maximum average forward rectified current
IF(AV)
8
Peak forward surge current
8.3 ms single half sine-wave
TJ =25°C
TJ =125°C
IFSM
200
170
Peak forward surge current
1.0 ms single half sine-wave
TJ =25°C
TJ =125°C
IFSM
600
338
Maximum instantaneous forward voltage (Note 1)
IF= 8 A
VF
0.985
Maximum reverse current @ rated VR
Typical Junction Capacitance (Note 2)
TJ=25°C
TJ=125°C
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
IR
CJ
RθJL
RθJA
TJ
TSTG
10
250
48
12.5
44
- 55 to +150
- 55 to +150
Note 2: Measured at 1.0MHz and applied reverse voltage of 4.0V DC
S8MC
1000
700
1000
UNIT
V
V
V
A
A
A
V
μA
pF
°C/W
°C
°C
Document Number: DS_D0000010
Version: C15
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