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FQP50N06 View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.

Part Name
Description
View to exact match
FQP50N06
THINKISEMI
Thinki Semiconductor Co., Ltd. THINKISEMI
FQP50N06 Datasheet PDF : 6 Pages
1 2 3 4 5 6
FQP50N06
®
Typical Characteristics
VGS
Top : 15.0 V
102
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
Note :
1. 250μ s Pulse Test
2. T = 25
C
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.05
0.04
V = 10V
GS
0.03
V = 20V
GS
0.02
0.01
0.00
0
Note : TJ = 25
50
100
150
200
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3000
2500
2000
1500
C
oss
Ciss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
Crss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MHz
1000
C
rss
500
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
102
101
175
25
100
2
-55
Notes :
1.
2.
V25DS0μ=s30PVulse
Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
102
101
100
0.2
175
25
Notes :
1.
2.
V25GS0μ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 30V
DS
V = 48V
DS
8
6
4
2
Note : I = 50A
D
0
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 3/6
http://www.thinkisemi.com/
 

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