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PBSS5350X View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
PBSS5350X
Philips
Philips Electronics Philips
PBSS5350X Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Philips Semiconductors
50 V, 3 A
PNP low VCEsat (BISS) transistor
Product specification
PBSS5350X
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
ICES
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
collector-emitter saturation
voltage
RCEsat
VBEsat
VBEon
fT
Cc
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
CONDITIONS
VCB = 50 V; IE = 0
VCB = 50 V; IE = 0; Tj = 150 °C
VCE = 50 V; VBE = 0
VEB = 5 V; IC = 0
VCE = 2 V
IC = 0.1 A
IC = 0.5 A
IC = 1 A; note 1
IC = 2 A; note 1
IC = 3 A; note 1
IC = 0.5 A; IB = 50 mA
IC = 1 A; IB = 50 mA
IC = 2 A; IB = 100 mA
IC = 2 A; IB = 200 mA; note 1
IC = 3 A; IB = 300 mA; note 1
IC = 2 A; IB = 200 mA; note 1
IC = 2 A; IB = 100 mA
IC = 3 A; IB = 300 mA; note 1
VCE = 2 V; IC = 1 A
IC = 100 mA; VCE = 5 V;
f = 100 MHz
VCB = 10 V; IE = Ie = 0; f = 1 MHz
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
MIN.
TYP.
MAX. UNIT
100 nA
50 µA
100 nA
100 nA
200
200
200
130
80
90
1.1
100
450
90
180
320
270
390
135
1.1
1.2
mV
mV
mV
mV
mV
m
V
V
V
MHz
35
pF
2003 Nov 21
6
 

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