IRFS350A View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
View to exact match
IRFS350A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS350A
FEATURES
·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
400
V
±30
V
ID
Drain Current-Continuous
11.5
A
IDM
Drain Current-Single Pluse
68
A
PD
Total Dissipation @TC=25℃
92
W
TJ
Max. Operating Junction Temperature
-55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
1.35
40
UNIT
℃/W
℃/W
isc website：www.iscsemi.cn
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