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K2053 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
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K2053
NEC
NEC => Renesas Technology NEC
K2053 Datasheet PDF : 6 Pages
1 2 3 4 5 6
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2053
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2053 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
PACKAGE DIMENSIONS (in mm)
5.7 ±0.1
2.0 ±0.2
1.5 ±0.1
FEATURES
• New package intermediate between small signal and
power types
• Gate can be driven by 1.5 V
• Low ON resistance
RDS(on) = 0.40 MAX. @ VGS = 1.5 V, ID = 1.0 A
RDS(on) = 0.12 MAX. @ VGS = 4.0 V, ID = 2.5 A
S
D
G
0.5 ±0.1
0.85
±0.1
2.1
4.2
0.5 ±0.1
EQUIVALENT CURCUIT
0.4 ±0.05
Marking: NA1
Gate (G)
Gate
protection
diode
Drain (D)
Internal
diode
PIN
CONNECTIONS
S: Source
D: Drain
G: Gate
Source (S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Voltage
VDSS
VGS = 0
Gate to Source Voltage
VGSS
VDS = 0
Drain Current (DC)
ID(DC)
Drain Current (Pulse)
Total Power Dissipation
ID(pulse)
PT
PW 10 ms, duty cycle 50 %
7.5 cm2 × 0.7 mm ceramic substrate used
Channel Temperature
Tch
Operating Temperature
Topt
Storage Temperature
Tstg
RATING
16
±7.0
±5.0
±10.0
2.0
150
–20 to +60
–55 to +150
UNIT
V
V
A
A
W
˚C
˚C
˚C
Document No. D11224EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
©
1996
 

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