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MCR8M View Datasheet(PDF) - Digitron Semiconductors

Part Name
Description
View to exact match
MCR8M
DIGITRON
Digitron Semiconductors DIGITRON
MCR8M Datasheet PDF : 2 Pages
1 2
DIGITRON SEMICONDUCTORS
MCR8D, MCR8M, MCR8N
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive off-state voltage(1)
Peak repetitive reverse voltage
(TJ = -40 to +125°C)
MCR8D
MCR8M
MCR8N
On-state RMS current (all conduction angles)
Peak non-repetitive surge current
(one half-cycle, 60Hz, TJ = 125°C)
Circuit fusing (t = 8.3ms)
Peak gate power (pulse width 1.0µs, TC = 80°C)
Average gate power (t = 8.3ms, TC = 80°C)
Peak gate current (pulse width 1.0µs, TC = 80°C)
Operating temperature range
Storage temperature range
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGM
TJ
Tstg
Value
400
600
800
8
80
26.5
5
0.5
2
-40 to +125
-40 to +150
Unit
V
A
A
A2s
W
W
A
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum
Unit
Thermal resistance, junction to case
RӨJC
2.0
°C/W
Thermal resistance, junction to ambient
RӨJA
62.5
°C/W
Maximum lead temperature for soldering
purposes 1/8” from case for 10s
TL
260
°C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak forward blocking current
Peak reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 125°C
IDRM
IRRM
ON CHARACTERISTICS
Peak on-state voltage *
(ITM = 16A)
VTM
Gate trigger current (continuous dc)
(VD = 12V, RL = 100)
IGT
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 100)
VGT
Holding current (anode voltage = 12V)
IH
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage
(VD = rated VDRM, exponential waveform, gate open, TJ = 125°C)
* Pulse width 2.0ms, duty cycle 2%.
dv/dt
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
Min
Typ
Max
Unit
mA
-
-
0.01
-
-
2.0
V
-
-
1.8
mA
2.0
7.0
15
V
0.5
0.65
1.0
4.0
22
30
mA
V/µs
50
200
-
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130108
 

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