BC869-25 View Datasheet(PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

Part Name

Description

View to exact match

BC869-25

SOT-89-3L Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

BC869 TRANSISTOR (PNP)

FEATURES

 NPN Complement to BC868

 Low Voltage

 High Current

SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-32

-20

-5

-1

500

250

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base -emitter voltage

Transition frequency

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

hFE(2)

hFE(3)

VCE(sat)

VBE

fT

Test conditions

Min Typ

IC=-100µA,IE=0

-32

IC=-1mA,IB=0

-20

IE=-100µA,IC=0

-5

VCB=-25V,IE=0

VEB=-5V,IC=0

VCE=-10V, IC=-5mA

50

VCE=-1V, IC=-0.5A

100

VCE=-1V, IC=-1A

60

IC=-1A,IB=-0.1A

VCE=-1V, IC=-1A

VCE=-10V, IC=-5mA

-0.62

VCE=-5V,IC=-10mA, f=100MHz 40

Max

-0.1

-0.1

375

-0.5

-1

CLASSIFICATION OF hFE(2)

RANK

RANGE

MARKING

BC869

100–375

CEC

BC869-16

100–250

CGC

BC869-25

160–375

CHC

Unit

V

V

V

µA

µA

V

V

V

MHz

www.cj-elec.com

1

C,Nov,2015

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