BC869,146 View Datasheet(PDF) - NXP Semiconductors.
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BC869,146 Datasheet PDF : 0 Pages
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Nexperia
BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
7. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base cut-off VCB = 25 V; IE = 0 A
current
VCB = 25 V; IE = 0 A;
Tj = 150 C
IEBO
emitter-base cut-off VEB = 5 V; IC = 0 A
current
-
-
100 nA
-
-
10 A
-
-
100 nA
hFE
VCEsat
VBE
Cc
DC current gain
VCE = 10 V
IC = 5 mA
50 -
DC current gain
VCE = 1 V
IC = 500 mA
[1] 85
-
IC = 1 A
[1] 60
-
IC = 2 A
[1] 40
-
DC current gain
VCE = 1 V
hFE selection -16
IC = 500 mA
[1] 100 -
hFE selection -25
IC = 500 mA
[1] 160 -
collector-emitter
IC = 1 A; IB = 100 mA [1] -
-
saturation voltage
IC = 2 A; IB = 200 mA [1]
base-emitter voltage VCE = 10 V; IC = 5 mA [1] -
-
VCE = 1 V; IC = 1 A
[1] -
-
collector capacitance VCB = 10 V; IE = ie = 0 A;
-
28
f = 1 MHz
-
375
-
-
250
375
0.5 V
0.6 V
0.7 V
1 V
-
pF
fT
transition frequency VCE = 5 V; IC = 50 mA;
40 140 -
MHz
f = 100 MHz
[1] Pulse test: tp 300 s; = 0.02.
BCP69_BC869_BC69PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
© Nexperia B.V. 2017. All rights reserved
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