BC869 View Datasheet(PDF) - Philips Electronics
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Description
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BC869 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP medium power transistor
Product specification
BC869
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
93
K/W
13
K/W
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBE
fT
DC current gain
BC869-16
BC869-25
collector-emitter saturation
voltage
base-emitter voltage
transition frequency
CONDITIONS
IE = 0; VCB = −25 V
IE = 0; VCB = −25 V; Tj = 150 °C
IC = 0; VEB = −5 V
IC = −5 mA; VCE = −10 V; see Fig.2
IC = −500 mA; VCE = −1 V; see Fig.2
IC = −1 A; VCE = −1 V; see Fig.2
IC = −500 mA; VCE = −1 V; see Fig.2
IC = −1 A; IB = −100 mA
MIN. TYP. MAX. UNIT
−
−
−
−
−
−
50 −
100 −
60 −
−100 nA
−10 µA
−100 nA
−
375
−
100 −
160 −
−
−
250
375
−500 mV
IC = −5 mA; VCE = −10 V
−
IC = −1 A; VCE = −1 V
−
IC = −10 mA; VCE = −5 V; f = 100 MHz 40
−620 −
−
−1
−
−
mV
V
MHz
1999 Apr 08
3
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