2SB1411 View Datasheet(PDF) - New Jersey Semiconductor
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Description
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2SB1411 Datasheet PDF : 2 Pages
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, One..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1411
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)CEO=-100V(Min)
• High DC Current Gain-
: hFE= 1500(Min)@ (VCE= -3V, lc= -1A)
• Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ (lc= -1A, IB= -2mA)
APPLICATIONS
• High power switching applications.
• Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-100
V
B Ml
'•2
T^v
1
J
— • — iw—
tin: I Base
2 Colle ctor
3 Eiiitt er
TO-220F package
B
- C-
-s-
9
U
A
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Ic
Collector Current-Continuous
I CM
Collector Current-Peak
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25'C
PC
Collector Power Dissipation
@TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature
-100
V
-7
V
-2
A
-3
A
-0.5
A
2
W
20
150
'C
-55-150 •c
H
R
K
• -0
- N-
J •-
mitl
DtM MtN MAX
A 14.95 15.05
B 10.00 10.10
C 4.40 4.60
D 0.75 0,90
F 3.10 3.30
H 3.70 3.90
J 0.50 0.70
K 13.4 13.6
L 1.10 1.30
N 5.00 5.20
Q 2.70 2.90
Rs
u
2.20
2.65
6.40
2.40
2.85
6.60
N.I Semi-conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of goinu
to press. l l o \ \ e \ e r , N.I Semi-Conduelors iissumes no responsibility for an> errors or omissions discovered in its u.-,e. *"
N I Semi-Oinductors cncimra.ues (.-nsloiners to \erify that datasheets are oimviil before placing oiilers.
Qualify 5emi-Conductors
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