PMBTA92 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
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NXP Semiconductors
PNP high-voltage transistor
Product data sheet
PMBTA92
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBEsat
Cc
fT
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = −200 V
IC = 0; VEB = −3 V
VCE = −10 V; note 1
IC = −1 mA
IC = −10 mA
IC = −30 mA
IC = −20 mA; IB = −2 mA
IC = −20 mA; IB = −2 mA
IE = Ie = 0; VCB = −20 V; f = 1 MHz
IC = −10 mA; VCE = −20 V;
f = 100 MHz
MIN.
−
−
25
40
25
−
−
−
50
MAX.
−250
−100
−
−
−
−500
−900
6
−
UNIT
nA
nA
mV
mV
pF
MHz
2004 Jan 22
3
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