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PMBTA92 View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
PMBTA92
Philips
Philips Electronics Philips
PMBTA92 Datasheet PDF : 0 Pages
Philips Semiconductors
PNP high-voltage transistor
Product specification
PMBTA92
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBEsat
Cc
fT
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = 200 V
IC = 0; VEB = 3 V
VCE = 10 V; note 1
IC = 1 mA;
IC = 10 mA
IC = 30 mA
IC = 20 mA; IB = 2 mA
IC = 20 mA; IB = 2 mA
IE = ie = 0; VCB = 20 V; f = 1 MHz
IC = 10 mA; VCE = 20 V;
f = 100 MHz
MIN.
25
40
25
50
MAX.
250
100
UNIT
nA
nA
500
900
6
mV
mV
pF
MHz
1999 Apr 13
3
 

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