FX20ASJ-2 View Datasheet(PDF) - Powerex
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FX20ASJ-2 Datasheet PDF : 4 Pages
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MITSUBISHI Pch POWER MOSFET
FX20ASJ-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –100V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –10A, VGS = –10V
ID = –10A, VGS = –4V
ID = –10A, VGS = –10V
ID = –10A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –50V, ID = –10A, VGS = –10V, RGEN = RGS = 50Ω
IS = –10A, VGS = 0V
Channel to case
IS = –20A, dis/dt = 100A/µs
Min.
–100
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
—
—
–1.5
0.20
0.25
–2.0
10.3
2360
198
99
13
30
139
74
–1.0
—
100
Max.
—
±0.1
–0.1
–2.0
0.26
0.32
–2.6
—
—
—
—
—
—
—
—
–1.5
3.57
—
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
–2
–102
–7
–5
10ms
100µs
tw =
10µs
–3
–2
–101
–7
–5
1ms
–3
–2
–100
–7
–5
TC = 25°C
Single Pulse
–3
DC
–2
–2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
–50
VGS =
–10V –8V
Tc = 25°C
Pulse Test
–40
–6V
–5V
–30
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
VGS =
–4V
–10V
–16
–6V
Tc = 25°C
Pulse Test
–12
–5V
–20
–4V
–8
–3V
–10
–3V
PD = 35W
0
0
–10 –20 –30 –40 –50
DRAIN-SOURCE VOLTAGE VDS (V)
–4
PD = 35W
0
0
–4 –8 –12 –16 –20
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999
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