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STB19NB20 데이터 시트보기 (PDF) - STMicroelectronics

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STB19NB20 N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
STB19NB20 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
STB19NB20
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 100 V ID = 9.5 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 160 V ID = 19 A VGS = 10 V
Min.
Typ.
15
15
Max.
20
20
Unit
ns
ns
29
40
nC
9.5
nC
13
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 160 V ID = 19 A
RG = 4.7 VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
10
10
20
Max.
15
15
30
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
( pu ls ed)
VSD () Forward On Voltage
ISD =19 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD =19 A di/dt = 100 A/µs
VDD = 50 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
19
76
Unit
A
A
1.5
V
210
ns
1.5
µC
14.5
A
Safe Operating Area
Thermal Impedance
3/8
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