STB19NB20 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

View to exact match

STB19NB20

N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET

STMicroelectronics 

®

STB19NB20

N - CHANNEL ENHANCEMENT MODE

PowerMESH™ MOSFET

TYPE

ST B19NB 20

VDSS

200 V

RDS(on)

< 0.180 Ω

ID

19 A

s TYPICAL RDS(on) = 0.150 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

s FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an

advanced family of Power MOSFETs with

outstanding performance. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

3

1

D2PAK

TO-263

(suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

VDS Drain-source Voltage (VGS = 0)

V DGR

VGS

ID

ID

Drain- gate Voltage (RGS = 20 kΩ)

G ate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

IDM(•)

Ptot

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Ts tg Storage T emperature

Tj

Max. O perating Junct ion T emperature

(•) Pulse width limited by safe operating area

Value

200

200

± 30

19

12

76

125

1

5.5

-65 to 150

150

( 1) ISD ≤ 19A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Unit

V

V

V

A

A

A

W

W /o C

V/ns

oC

oC

June 1998

1/8

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