datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

AOD407 View Datasheet(PDF) - shenzhen wanhexing Electronics Co.,Ltd

Part Name
Description
View to exact match
AOD407
WHXPCB
shenzhen wanhexing Electronics Co.,Ltd WHXPCB
AOD407 Datasheet PDF : 6 Pages
1 2 3 4 5 6
万和兴电子有限公司 www.whxpcb.com
AOD407
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD407 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
-RoHS Compliant
-Halogen Free*
Features
VDS (V) = -60V
ID = -12A (VGS = -10V)
RDS(ON) < 115m(VGS = -10V)
RDS(ON) < 150m(VGS = -4.5V)
100% UIS tested
100% RG tested
Top View
TO252
DPAK
Bottom View
D
D
S
G
G
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
ID
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
Repetitive avalanche energy L=0.1mH C
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
-60
±20
-12
-10
-30
-12
23
50
25
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t 10s
Steady-State
RθJA
16.7
40
25
50
Maximum Junction-to-Case B
Steady-State
RθJC
2.5
3
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]